Internship: High frequency high power RF HEMT Devices
MERL is seeking a highly motivated, qualified individual to join our 3 month internship program to carry research in the area of high power semiconductor devices and negative capacitance. The ideal candidate should have a significant background in the theory, simulation and modeling of high speed high power semiconductor HEMT from first principle Physics. Proficiency in Semiconductor theory and solid state physics in particular would be a great asset. Candidates who hold a PhD or in their senior years of a Ph.D. program are encouraged to apply. The position is open from April 2017 for a duration of at least 3 months
Research Areas: Applied Physics
Contact: Koon Hoo Teo
Mitsubishi Electric Research Labs, Inc. "MERL" provides equal employment opportunities (EEO) to all employees and applicants for employment without regard to race, color, religion, sex, national origin, age, disability or genetics. In addition to federal law requirements, MERL complies with applicable state and local laws governing nondiscrimination in employment in every location in which the company has facilities. This policy applies to all terms and conditions of employment, including recruiting, hiring, placement, promotion, termination, layoff, recall, transfer, leaves of absence, compensation and training.
MERL expressly prohibits any form of workplace harassment based on race, color, religion, gender, sexual orientation, gender identity or expression, national origin, age, genetic information, disability, or veteran status. Improper interference with the ability of MERL’s employees to perform their job duties may result in discipline up to and including discharge.
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